Investigation of Low-cost and High Efficiency Ga-Doped Cz-Si Solar Cells

In this paper, attention is concentrated on the availability of low-cost mass-production technical solution for Ga-doped Cz-silicon PERC solar cell. By optimizing the fabrication process, the impacts of Ga-doped wafers base resistivity on the series resistivity of PERC solar cell could be suppressed. The difficulties of low utilization lead by small segregation of gallium can be solved successfully by silicon rod sectional usage and matching respective cell process simultaneously. And the LID test shows that, even if the perfect surface passivation is performed, the efficiency loss caused by illumination is decreased slightly about 0.109% to 0.145% (absolute value), which illustrate the Ga-doped PERC solar cell has a prominent light induced stabilization.