Large-Area Material and Junction Damage in c-Si Solar Cells by Potential-Induced Degradation

In this work, we discuss a new fundamental PID mechanism that has not been reported. We developed in-situ Kelvin probe force microscopy to monitor the potential evolution at nanometer scale under high-voltage stress. We observed large-area junction degradation during the stressing and junction recovery by heat treatment from the same location. Electron-beam induced current (EBIC) results support the large-area damage, which has a much lower collected current (dark region) and has an abrupt transition between the bright and dark areas, in addition to local shunts. Transmission electron microscopy does not find stacking faults in the dark-EBIC region. Furthermore, time-of-flight secondary-ion mass spectrometry indicates that the large-area damage correlates with more sodium content. The consistent results shed new light on PID mechanisms that are essentially different from the widely reported local-junction shunts.