Effect of Deposition Conditions on the Properties of TCO Films

The optical and electrical properties of indium metal oxide (IMO) films have been investigated under different deposition conditions for silicon heterojunction (SHJ) solar cell applications. By adjusting oxygen concentration in the sputtering gas, and increasing magnetic field strength of the cathode, we observed enhancements in photoelectric properties of the IMO film. A maximum Hall mobility of 49.1 cm
²
/V·s was reached with optimal transmittance. Furthermore, there was a 0.62 mA·cm
^-2
gain in short-circuit current (J
_SC
) with high performance IMO films, resulting in an increased conversion efficiency by 0.6%.