The influence of direct, delta, and modulation QD Si doping on InAs/GaAs quantum dot solar cells

The effects of direct, delta, and modulation Si QD doping on InAs/GaAs QDSCs are studied. The PL, EQE, and J-V characterisation results show a clear relationship between the doping methods and the non-radiative recombination. All doped QDSCs exhibited increase in the V
_OC
due to reduced thermal coupling from QD Si doping. Delta and modulation-doped QDSCs exhibit further improvements in V
_OC
due to reduced nonradiative recombination. Moreover, the modulation-doped QDSC shows improvements in both the current density and the voltage compared with the directly doped QDSC.