Miracle: Material Independent Rear Passivating Contact Solar cells using optimized texture and novel p+poly-Si hydrogenation

A record low surface recombination current for boron doped p+poly-Si passivation on random pyramid textured Cz wafers (Jo,s of 10 fA/cm
²
) has been achieved, with an outlook to even lower Jo,s values. Solar cells have been completed using a lowcost process flow based on screen-printed and firing-through metallization and with a process flow that is applicable to both ntype and p-type c-Si wafers. The cells have a uniform p+poly-Si backside passivation including passivating contacts and a local n+poly-Si passivating contact on the front. A first batch of 6 inch cells prepared with these passivating contacts and low-cost processing yielded efficiencies up to 20.1%.