Location of p-n Defects by Electroluminescence

The laser isolation of p-n junctions is the origin of well known electrical damage in solar cells. Although several models based in complex recombination phenomena have been used to explain these effects, this work uses a simple model of a single 2kT diode connected to the cell by a large variable value resistance. A previous work has shown the coherence of the model in terms of I-V behavior at different temperatures but without any evidence of their physical nature. This work uses electroluminescence techniques to validate this model finding the recombination current paths from the cell volume to the high recombination defects.