Energy-Conversion Properties of Si/GaAs Mesowires Containing fewer Threading Dislocations

In this preliminary study, we employed a direct metamorphic technique to grow Si/GaAs mesowires containing very few threading dislocations at the interface. Photoelectrochemistry was used as a novel approach to investigate the energy-conversion properties of large arrays of tandem Si/GaAs mesowire solar cells, in addition to study of their optoelectronics properties. By surrounding each nanowire with a liquid electrolyte, we formed radial semiconductor/electrolyte Schottky junctions, enabling a fast and direct investigation of the energyconversion properties of the wire arrays, without fabricating any additional solid-state contacts. Our findings are important for the further understanding of design principles, and device physics, of wire-based Si/III-V tandem solar cells.