Improving Intrinsic Silicon Nanoparticle Film by Press Treatment for use in p–i–n Solar Cells

An intrinsic silicon nanoparticle (i-SiNP) layer was fabricated using the spin-coating technique and utilized as the active layer of a solar cell. The electrical conductivity of the i-SiNP layer was enhanced via press treatment, which increased the density and electrical conductivity of the SiNPs. Raman spectroscopy and electron-spin resonance results indicated that the SiNPs were only in contact with each other and were not bound together. To fabricate a solar cell with an i-SiNP active layer, a-Si was used to synthesize the p- and n-type doping layers. The open-circuit voltage of the cell was 140mV.