Simulations on Laser-Phosphorous-Doped Selective Emitters

Simulation results concerning laser-doped selective emitters (LDSE) for the phosphorous doped front side of passivated emitter and rear solar cells are presented. We introduce a formula for different emitter doping profiles to study the influence on the dark saturation current density at the emitter-metal interface j
_0e,met
. It is shown that j
_0e,met
can be reduced by deep and heavily-doped LDSEs. In addition, we report on how energy conversion efficiency can be predicted accounting for potential misalignment between LDSE and contact structures. As a result, we recommend avoiding the occurrence of non-laser-doped metallized areas. According to our simulation, energy conversion efficiency is increased by about 0.5%abs to 21.8% by implementing the LDSE.