21.6% monoPolyTM cells with in-situ interfacial oxide and poly-Si layers deposited by inline PECVD

Passivated contacts are an increasingly popular option for achieving higher efficiencies in silicon wafer solar cells. In this study, we investigate passivated contacts deposited by inline PECVDto enable easy transfer of this technology to large-scale production. Two types of interfacial oxides fabricatedin-situ by proprietary processes are compared when capped by an electron-selective PECVDn
⁺
-doped polycrystalline Si (n
⁺
:poly-Si). Passivated contacts with one type of oxide layers perform better achieving a best cell efficiency of 21.6% when used as the rear contact in SERIS' large-area bifacialn-type monoPoly
^TM
solar cells.