Analytical Modeling for the Characterization of On-Chip Spiral Inductor in 0.13 μm

In this paper, we present the modeling for a rapid characterization of integrated spiral inductors. Closed-form has been used to estimate the parameters of the equivalent circuit, which are calculated as a function of the parameters of the inductor physical design. The double-π equivalent circuit was adopted to model the physical phenomena resulting from electromagnetic coupling and high-frequency operation. The method for calculating the oxide capacitance has included the contribution of the fringing electric fields for better prediction of the inductor characteristics. In order to verify the performed modeling, a set of octagonal on-chip spiral inductors with different geometries were simulated in the Momentum ADS and the main figures of merit of the inductor were compared. The mean error between the model and EM simulation was 3.6% for the DC inductance, 7.7% for the maximum value of the quality factor and 1.3% for the self-resonance frequency.