Modeling of the Temperature Dependence of Polycrystalline-Si Conductivity in TCAD Sentaurus Environment

On the basis of available concepts on the impact of defects in silicon on the concentration of free charge carriers, we have developed, with the help of the TCAD Sentaurus program package, a program permitting the study of the temperature dependence of conductivity in polycrystalline silicon films. In TCAD Sentaurus environment, computational experiments and an analysis of the impact of the concentration and energy distribution of defects on the temperature dependence of the relative change of resistance in poly-Si films were performed. It is shown that taking into account the heating-induced release of charge carriers from traps enables an adequate description of the experimentally observed dependences of the relative change of resistance on temperature when, with a change of temperature, not only the magnitude but also the sign of the temperature coefficient of resistance can undergo a change.