Sensitized Photovoltaic Effect in Silicon

The influence of organic dyes applied to the semiconductor surface on the value of photo-EMF in the monocrystalline silicon was investigated. The internal photo effect sensitization of the semiconductor was found in the dye absorption band. The optimum concentration of dye molecules on the semiconductor surface is determined, that corresponds to the dye film thickness of 10-15 nanometers. The mechanism of the sensitization based on the theory of non-radiative resonant inductive energy transfer is discussed.