Switching Simulation of TIGBT in TCAD Mixed-Mode

This work describes calibration of both turn-off and turn-on switching losses of I200V UltraFS Trench Insulated Gate Bipolar Transistor (TIGBT) by using equivalent circuit of Double Pulse Tester (DPT) in Synopsys TCAD mixed-mode simulation. The model contains main parasitic elements which are necessary for model accuracy especially for fast transient simulation with inductive load. Temperature dependence is covered in the model and simulations fit characterization data very well also for high temperature (150°C).