Electrically Active Defects in 10 kV SiC PIN Diode Structures with Natural and Isotope Pure Layers

This paper presents Deep Level Transient Fourier Spectroscopy study results of deep energy levels in 10 kV SiC based PIN diodes. Five types of samples with/without isotope-pure epitaxial SiC layers were experimentally analyzed and evaluated. Parameters of 8 defects have been identified. Z1/2 centers, known as a lifetime killer were clearly identified in all structures. These results indicate a carbon vacancy origin that can have a connection with the fabrication process.