Power P-GaN HEMT Under Single and Multi-Pulse UIS Conditions

In this paper we present the results of Unclamped Inductive Switching (UIS) measurements of power GaN HEMTs comprised of p-GaN gates. Typical test waveforms and basic description of effects during discharging period of inductor are presented and discussed. Also impact of repetitive UIS on electrical performance was analysed. Experiments show that samples exposed to repetitive UIS conditions are measurably degraded by the stress during turn off transient intervals when high current and high voltage are simultaneously present on the device leading to high generation of hot electrons.