Study of Emission and Capture Processes in AlGaN/GaN HEMT Heterostructures

Authors of this contribution are discussing and comparing two e-mode p-GaN HEMT samples from defect distribution point of view. Focus is put on the differences in leakage current and the identified deep energy levels by Deep Level Transient Spectroscopy. The investigation showed a possible connection between the leakage current where in sample A with higher leakage current 9 deep energy levels, while in sample B with lower leakage current only five deep energy levels were identified. This conclusion was verified by temp-fit simulations and Arrhenius plot examinations. The presence of Mg acceptor, nitrogen interstitials and carbon interstitial defect were confirmed in both types of samples.