The characterization of trimethylsilane based PE-CVD α-SiCO:H low-k films

The trimethylsilane (3MS) based low-k α-SiCO:H films can be made using 3MS, He and N
₂
O in typical PECVD equipment. In this study, the structure, composition, and electrical characteristics of these films were evaluated with different process conditions. RBS and FTIR were evaluated to understand the composition and structure of films. The films have been characterized as-deposited and after annealing at 400°C to see the thermal stability. 3MS low-k α-SiCO:H films showed low bulk film density (1.14-1.34 g/cm
³
), low-k (2.6 < k < 3.2), low leakage current density (J < 10/sup -10/ A/cm
²
at 1 MV/cm), and relatively high breakdown field (E > 4 MV/cm at 1 mA/cm
²
).