Quasi-MMIC High Power Amplifier with Silicon IPD Matching Network

In this paper, the quasi-monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) with silicon integrated passive device (IPD) matching network is proposed. The proposed quasi-MMIC HPA consists of commercial GaN transistor power cell and IPD matching network using silicon substrate. The proposed quasi-MMIC HPA can achieve similar output power and efficiency characteristics compared with the conventional MMIC HPAs. Moreover, the manufacturing cost can be reduced due to the silicon substrate process. For experimental validation, the proposed quasi-MMIC HPA was designed and fabricated at the 8.5 GHz for radar application. The measurement results shows that the output power and drain efficiency at saturation point are 48.5 dBm (70.8W) and 45.5%, respectively, with pulse signal test (100 usec pulse width and 10%duty.