Thermal properties of semiconductor oxide-confinement vertical-cavity lasers

We present results of a thermodynamic model application for the investigation of the oxide-confinement vertical-cavity laser. By including carrier diffusion and thermal propagation equations in the laser dynamics, one can take into account a nonuniform electron transport and heating in the non-symmetrical laser structure. The observed model is useful in analysis of laser dynamics and to further parameter optimization of the vertical-cavity laser structure.