MOS Dosimeter Based on Ge Nanocrystals in Hfo2

Trilayer MOS capacitors gate HfO
₂
/floating gate of Ge nanocrystals in HfO
₂
/tunnel HfO
₂
/Si substrate were prepared in the aim to be used for the detection of ionizing radiation. Magnetron sputtering and rapid thermal annealing were used for their fabrication. Capacitance-voltage measurements showed that Ge nanocrystals are the most important charge storage centres in our structure. The possibility to use these trilayer MOS capacitors as dosimeters was investigated, and the sensitivity to a particle irradiation was extracted.