Optimization and Contact Reliability of TiN-Coated Microswitches in Various Gas Environments

Titanium nitride (TiN) is of interest as a material in MEMS and NEMS switches due to its high hardness, low-surface energy, good electrical conductivity, and resistance to chemical oxidation. We perform extensive characterization of TiN for microswitches. We optimize process parameters to attain low resistivity (60 μΩ · cm) and acceptable residual stress. A specific resistivity of 9·10
^-6
Ω cm
²
is achieved, about 50 times lower than previous reports. We successfully wedge bond to the TiN with Al wire using high ultrasonic power. Because surface stoichiometry of binary alloys may depend on mechanochemical effects, we cycle test in controlled O
₂
, N
₂
, Ar, and N
₂
:C
₆
H
₆
gas environments. Of these, O
₂
yielded short lifetimes (~100 cycles), while N
₂
and Ar gave equivalent results (~10
⁵
cycles). The N
₂
:C
₆
H
₆
environment enabled the longest lifetimes (≥17 · 10
⁶
cycles) at the expense of increasing ECR. The cycle count limit in N
₂
and Ar was investigated and traced to a weak microstructure that develops at corners of the contacting surfaces. If such corners are avoided in future designs, TiN-coated switches likely can survive to much higher cycle counts.