A Path to Energy Efficiency and Reliability for ICs: Fully Depleted Silicon-on-Insulator (FD-SOI) Devices Offer Many Advantages

Fully depleted silicon-on-insulator (FD-SOI) devices built on an ultrathin SOI layer on a buried-oxide (BOX) substrate feature unique performance capabilities and are suitable for full-range body biasing. FD-SOI technology has been adopted for multiple technology nodes and a wide range of current and upcoming microelectronic market segments, especially in the Internet of Things (IoT), wearable electronics, artificial intelligence (AI), and automotive applications, where ultralow power and reliability are required.