Comparative Study of X- and γ-Ray Detectors with MoOx, TiOx and TiN Schottky Contacts

Electrical characteristics of the Mo-MoO
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/p-CdTe/MoO
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-Mo, Ti-TiO
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/p-CdTe/MoO
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-Mo and Ti-TiN/p-CdTe/MoO
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-Mo structures, manufactured by magnetron sputtering of the thin films on CdTe semi-insulating crystals, produced by Acrorad Co. Ltd were studied. The optimization of conditions of the substrate pretreatment and the contacts deposition allowed to reduce the dark current of the Mo-MoO
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/p-CdTe/MoO
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-Mo detectors compared to earlier analogs and, consequently, to improve its spectrometric characteristics. There was shown that the structure Mo-MoO
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/p-CdTe/MoO
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-Mo, TiTiO
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/p-CdTe/MoO
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-Mo and Ti-TiN/p-CdTe/MoO
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-Mo can be used for practical applications in the X- and γ-ray detectors.