Ultra-High-Efficiency Writing in Voltage-Control Spintronics Memory (VoCSM): The Most Promising Embedded Memory for Deep Learning

Our new proposal of voltage-control spintronics memory (VoCSM) in which spin-orbit torque in conjunction with the voltage-control-magnetic-anisotropy effect works as the writing principle showed small switching current of
$37~\mu \text{A}$
for about 350
$K_{B}T$
switching energy. This indicates VoCSM’s writing efficiency is so high that VoCSM would be applicable for deep learning memories requiring ultra-low power consumption.