Fully Printed Top-Gate Metal–Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric

The fully inkjet-printed top-gate metal-oxide thin-film transistors (TFTs) with excellent electrical performance are realized with the gate dielectric layer of scandium zirconium oxide (Sc
₁
Zr
₁
O
_x
). It is found that adding of nitrate-based scandium oxide (ScO
_x
) precursor into the chloride ligand-based zirconium oxide (ZrO
_x
) precursor will reduce the corrosivity of the mixed solution, and the incorporation of Zr ions into ScOx will suppress the hydrogen-ion migration and eliminate the acceptor-like traps in pure ScO
_x
. The fully printed indium gallium oxide (InGaO) TFTs based on Sc
₁
Zr
₁
Ox dielectric exhibited an average mobility of 10.8 cm
²
V
^-1
· s
^-1
, a highest mobility of 12.9 cm
²
· V
^-1
· s
^-1
, negligible hysteresis, and excellent stability under both the negative and positive bias stresses. In addition, a resistor-loaded inverter was fabricated using a fully printed InGaO TFT, which exhibited the full swing characteristics and a maximum gain of 5 at 2 V.