A transient SPICE model for digitally modulated RF characteristics of ion-implanted GaAs MESFET's

A transient SPICE model, which was previously developed for epitaxial GaAs MESFET's, was modified for ion-implanted GaAs MESFET's. The model accounts for both trapping and detrapping effects hence can simulate both low-frequency dispersion and gate-lag characteristics. The model was experimentally verified in terms of pulsed current-voltage (I-V) characteristics and digitally modulated RF carrier waveforms.