Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs

An approach is proposed to realize large-scale, “high-temperature” and high-fidelity quantum computing integrated circuits based on single- and multiple-coupled quantum-dot electron- and hole-spin qubits monolithically integrated with the mm-wave spin manipulation and readout circuitry in a commercial CMOS technology. Measurements of minimum-size 6 nm
$\times20$
nm
$\times80$
nm Si-channel n-MOSFETs (electron-spin qubit), SiGe-channel p-MOSFETs (hole-spin qubit), and double quantum-dot complementary qubits reveal strong quantum effects in the subthreshold region at 2 K, characteristic of resonant tunneling in a quantum dot. S-parameter measurements of a transimpedance amplifier (TIA) for spin readout show an improved performance from 300 K to 2 K. Finally, the qubit-with-TIA circuit has 50-
$\Omega $
output impedance and 78-dB
$\Omega $
transimpedance gain with a unity-gain bandwidth of 70 GHz and consumes 3.1 mW.