A Compact Bi-directional K and Ka Band SPDT in $0.13\mu\mathrm{m}$ SiGe BiCMOS Process

This paper proposes a compact symmetrical single pole double throw switch (SPDT) in 0.13μm BICMOS technology. By replacing the traditional quarter-wave transmission line with lumped components, the designed switch achieves 1.5dB insertion loss and 21 dB isolation at 26GHz within a compact size. Consuming very low DC power consumption, the SPDT exhibits good power handling capability and its input P1dB is larger than 17 dBm. The proposed switch could also perform as double pole single throw switch (DPST), which proves its bidirectional function.