Graphene-oxide-semiconductor planar-type electron emission device and its applications

The planar type electron emission devices based on a graphene-oxide-semiconductor (GOS) structure were developed. The GOS type electron emission devices fabricated by the combination of low temperature graphene deposition process of 800 °C and the post device annealing at 300 °C in vacuum achieved both of very high electron emission efficiency more than 10 % and high electron emission densities of around 100 mA/cm
²
.