SET Sensitivity of Trigate Silicon Nanowire Field-Effect Transistors

The single-event transient (SET) response of silicon-on-insulator trigate silicon nanowires is investigated using direct measurements of current transients. Resulting collected charge distributions are compared to simulations into two steps: Monte Carlo simulations of deposited energy and technology computer-aided design simulation of collected charge, using detailed description of charge generation. Good agreement with experimental data is obtained. Current simulation tools can, thus, be used, with minor optimization, to simulate such integrated devices. The analysis of SETs shows collected charge values lower than both the charge estimated from the linear energy transfer (LET) and the charge actually generated in the nanowire, revealing a limited sensitivity of nanowire devices to high-LET ions.