Evaluation of Dilute Bismide Materials for Mid-IR Applications

The introduction of Bismide in InAs leads to a strong bandgap reduction on the order of 40-50meV per percent Bi-admixture. This allows InAsBi to be able to reach mid-IR wavelengths in the 3-5 μm range with less than about three percent Bi. Typically, materials for this wavelength range suffer from very strong Auger losses. These have so far limited room-temperature CW operation in devices based on type-I quantum wells to wavelength shorter than about 3.5 μm.