Characterisation of 1200 V RB-IGBTs with Different Irradiation Levels Under Hard and Soft Switching Conditions

This paper presents characterisation of 1200 V, 25 A RB IGBT devices with various irradiation levels under hard and soft switching conditions using a double-pulse test circuit with an additional current clamp. The switching behaviour, particularly turn-on and turn-off characteristics, of these devices under various conditions are evaluated. Obtained results allow to assess the impact of irradiation level and di/dt on the conduction, turn-on and reverse recovery characteristics.