Impact of Gate Control on the Switching Performance of a 750A/3300V Dual SiC-Module

This paper measures dv/dt during switching of a new 3.3 kV Full SiC module rated for 750 A. Various measurements identify influences of temperature, gate resistance and gate voltage. This work analyzes controllability of voltage transients and impact on switching losses. The paper shows trade-offs between dv/dt and switching performance and indicates dv/dt ratings of commercial high-voltage SiC devices.