Analysis of Device and Circuit Parameters Variability in SiC MOSFETs-Based Multichip Power Module

In this contribution, a previously developed temperature-dependent SPICE model for SiC power MOSFETs is calibrated on experimental data of commercially available devices. Thereafter, its features are exploited for dynamic ET simulations of paralleled devices for multichip power module application. Finally, Monte Carlo ET simulations of paralleled devices during switching condition are used to evaluate the expected impact of statistical variation of device and circuit parameters on current sharing and on dissipated switching energy unbalance.