Analysis on Overheating Failure of 3.3kV/50A single-chip sub-module of 3.3kV/3kA Press Pack IGBT for the Hybrid DCCB

There are kinds of topologies of high voltage DC circuit breaker and the research on hybrid high voltage DC circuit breaker is popular for its high speed and low cost. PP IGBT(Press Pack Insulated Gate Bipolar Transistor) is a critical component to turn off the fault current in the Hybrid DC circuit breaker for VSC-HVDC. And the most common failure under the large current in short time is overheating failure. The 3.3kV/3kA PP IGBT has many parallel units and we take single-chip sub-module as a research object. Firstly, a waveform similar to that of the actual failure current is calculated. Secondly, a geometric model is built and then the temperature changes and distribution of the chip in the process of the PP IGBT turns off a large short-circuit current in a short time is created, which focuses on the condition that the current amplitude, duration varies and the reclosing happens.