Photo-carrier dynamics of MBE-grown GaAs on Silicon studied by optical-pump terahertz-probe

GaAs films were grown on Si (100) substrates with a “two-step buffer” growth technique using molecular beam epitaxy, wherein a low temperature GaAs buffer is grown at two substrate temperatures prior to the GaAs layer. Results of GaAs layer growth at two different substrate temperatures are compared using photoluminescence, Raman, and optical-pump terahertz-probe spectroscopy.