Broadband Terahertz Detection with an Antenna Coupled Zero-Bias Field-Effect Transistor

We de-embed the measured responsivity of an antenna coupled field-effect transistor and compare it with the ideal responsivity calculated from device parameters. The broadband zero-bias detector is characterized from 0.1 to 1.6 THz, reaching a de-embedded noise equivalent power of 7pW/√{}Hz at 0.6 THz. The III-V high electron mobility transistor is processed with UV -contact lithography.