Improved Quantum Efficiency in AlGaInSb/InAs Superlattices for Mid-Infrared Optoelectronics

Several mid-infrared superlattice and emitter regions, including new combinations, and have been designed and grown by molecular beam epitaxy. An ultrafast technique has been refined with CW measurements to obtain A, B, C recombination coefficients and emitter quantum efficiency. Promising results on AlGaInSb/InAs superlattices are presented, in addition to other material combinations.