Improving the Conductivity Limits in Si Doped Al Rich AlGaN

We report point defect control of two primary compensating defects in AlGaN: Cn and Viii+nSiAl, based on their dependence on chemical potentials. Reasonable control over the knee behavior of the conductivity and the low doping limit in Al
_0.65
Ga
_0.35
N thin films grown on sapphire is achieved.