Implementation of a Miniaturized SiC Inverter

This paper presents analysis, design, and implementation of a miniaturized inverters using SiC-MOSFETs. Theoretical analysis and experimental verification in this paper reveals the relationship between the time-domain switching properties and the frequency-domain impedance characteristics. Based on the analysis, damping resistors are inserted into the dc side of the inverter. The damping resistors can effectively reduce the impedance at resonant frequencies in frequency domain, and they also enable to suppress the surge voltage and oscillation across the switching devices in time domain. Moreover, it has theoretically and experimentally been confirmed that the damping resistors also have the capability of reducing the switching power losses in the circuit.