Recent Progress in High to Ultra-High-Voltage SiC Power Devices: Development and Application

The current status of silicon carbide (SiC) device development in various voltage ranges is reviewed. Especially for next-generation high to ultra-high-voltage devices, developments in SiC super-junction Metal Oxide Semiconductor Field Effect Transistors (MOSFET, here denoted as SJ-MOS) and SiC Insulated Gate Bipolar Transistors (IGBTs) are introduced. We expect that these next generation devices are going to trigger a paradigm shift in power electronics components, enabling very low conduction and switching losses.