A Study on Load Fluctuation of Isolated DC-DC Converter with Class Phi-2 Inverter using GaN-HFET

In recent years, the development and application of GaN-HFET(Heterojunction Field Effect Transistor) has become actively. As GaN-HFETs have advantages in high frequency operation, it is possible to down size power converters by rising switching frequency. In this paper, we investigate the load fluctuation of an isolated DC-DC converter with the class Phi-2 inverter circuit using GaN-HEFT, which is operated at 13.56 MHz.