Dynamic Switching Characteristics of 1 A Forward Current $\boldsymbol{\beta}$ -Ga2O3 Rectifiers

An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 × 10
^-3
cm
²
area) and an absolute forward current of 1 A on 8 μm thick epitaxial ß-Ga
₂
O
₃
drift layers. The recovery characteristics for these vertical geometry ß-Ga
₂
O
₃
Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.