Demonstration of GSMBE grown InP-GaAs/sub 0.51/Sb/sub 0.49//InP DHBTs

We report the implementation of GSMBE-grown carbon-doped InP/GaAsSb/InP double heterojunction transistors (DHBTs). The devices exhibit significantly improved peak cutoff frequencies when compared to nominally identical MOCVD-grown epitaxial structures. We also show that InP/GaAsSb/InP DHBTs behave well under high power dissipation bias conditions.