Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time

A new MRAM reference and sensing circuit that can achieve <; ±1μA resolution and 17.5nS read access from -40C to 125C is presented in this paper. A trimmable current-mode latch-type sense amplifier (CLSA) with hybrid-resistance-reference (HRR) and cell location compensation is proposed to resolve small read window of MRAM. Silicon data measurement is presented to demonstrate a logic-process compatible, fully functional 16Mb perpendicular MRAM in 40nm CMOS process.