Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric

Pentacene organic thin-film transistors (OTFTs) adopting high-k NdON, HfON and NdHfON as gate dielectrics are fabricated. Their electrical and physical characteristics are compared. With appropriate Nd/Hf ratio in the dielectric, the OTFT with NdHfON gate dielectric can achieve improved performance such as a carrier mobility of 1.1 cm
²
/V·s and a small threshold voltage of -1.20 V. The AFM results of the pentacene layer and the dielectric layer reveal that both improved dielectric and pentacene morphologies lead to the higher carrier mobility of the device.