The MOSFET performance degrading induced by electric heating coupling under electromagnetic pulse environment

Strong electromagnetic pulses cause failure of the MOSFET mainly through electrical or thermal breakdown. Therefore, the study of the thermal distribution of MOSFET is of great significance. A three-dimensional(3D) MOSFET is established with appropriate parameters by device simulator software (Sentaurus). The damage effect and degrading mechanism of MOSFET induced by electromagnetic pulse (EMP) are analyzed in detail. The results show that with EMP injection the only hot spot is at the drain-substrate PN junction where it first reaches the melting point of silicon due to heat deposition. Meanwhile, electric field intensity and current density in this area are densely distributed. The device is thermally damaged due to electrical heating coupling and thus fails or burns out.