Current Enhancement of Graphene-Inserted Tunneling Contact IGZO TFT

This paper presents a method to enhance the on-current (I
_on
) of the graphene-inserted tunneling contact IGZO thin film transistors (TCTFTs) by introducing a thin and highly-doped region at the contact. The highly-doped region is formed by post N
₂
annealing to generate donor-like defects near the IGZO surface. The introduction of this region can increase the I
_on
by ~ 7 times without affecting the off current I
_off
, leading to a much higher on/off current ratio. Steeper sub-threshold slope of the TCTFT compared with the normal TFT is also observed.