Ambipolar solution-processed CH3NH3PbBr3 perovskite phototransistors with ultra-thin Al2O3 protective layer

Organic-inorganic halide perovskite materials are attracting great attention for their excellent photoelectronic properties. Here we report the CH
₃
NH
₃
PbBr
₃
perovskite phototransistors with bipolar behaviors. The photoresponsivity of the perovskite devices reaches 4 AW
^-1
on V
_GS
= -2.2 V. In addition, the stability of organolead halide perovskite phototransistors is further improved by inserting ultra-thin Al
₂
O
₃
protective layer. The solution-based process and excellent device performance facilitate CH
₃
NH
₃
PbBr
₃
perovskite as candidate materials for photoelectronic applications.